T15V2M16B-70S データシートの表示（PDF） - Taiwan Memory Technology
部品番号
コンポーネント説明
一致するリスト
T15V2M16B-70S Datasheet PDF : 12 Pages
| |||
tm TE
CH
TIMING WAVEFORMS
READ CYCLE 1
(Address Controlled, CE = OE = VIL , WE =VIH , LB or/and UB = VIL )
tRC
Address
tAA
tOH
D O U T Previous Data Valid
Data Valid
T15V2M16B
READ CYCLE 2 ( WE =VIH)
tRC
Address
tAA
CE
tACE
UB / LB
OE
D OUT
tBA
tOE
High-Z
tBLZ tOLZ
tLZ
tOH
tHZ
tBHZ
tOHZ
DON'T CARE
UNDEFINED
Notes (READ CYCLE) :
1. WE are high for read cycle.
2. All read cycle timing is referenced from the last valid address to the first transition address.
3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition referenced to
VOH or VOL levels.
4. At any given temperature and voltage condition. tHZ (max.) is less than tLZ (min.) both for a given device
and from device to device interconnection.
5. Transition is measured ±200mV from steady state voltage with load. This parameter is sampled and not
100% tested.
6. Device is continuously selected with CE =VIL .
TM Technology Inc. reserves the right
P. 7
to change products or specifications without notice.
Publication Date: NOV. 2002
Revision:A
Share Link: 