M6MGB160S2BVP データシートの表示（PDF） - MITSUBISHI ELECTRIC

部品番号

コンポーネント説明

一致するリスト

M6MGB160S2BVP

16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY

MITSUBISHI ELECTRIC  

1. Flash Memory

MITSUBISHI LSIs

M6MGB/T160S2BVP

16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS

3.3V-ONLY FLASH MEMORY &

2,097,152-BIT (131,072-WORD BY 16-BIT / 262,144-WORD BY 8-BIT) CMOS SRAM

Stacked-MCP (Multi Chip Package)

DESCRIPTION

The Flash Memory of M6MGB/T160S2BVP is 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating

BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank

while the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for mobile and

personal computing, and communication products. The Flash Memory of M6MGB/T160S2BVP is fabricated by CMOS technology for the

peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells.

FEATURES

Organization

.................................1048,576 word x 16bit

.................................2,097,152 word x 8 bit

Supply voltage ............................................................. VCC = 2.7~3.6V

Access time

.............................. 90ns (Max.)

Power Dissipation

Read

.................................

54 mW (Max. at 5MHz)

(After Automatic Power saving) .......... 0.33mW (typ.)

Program/Erase

Standby

..................................................................102.633mmWW

(Max.)

(typ.)

Deep power down mode ....................... 0.33mW (typ.)

Auto program for Bank(I)

Program Time .................................4ms (typ.)

Program Unit

(Byte Program)

.........................1word/1byte

(Page Program) .........................128word/256byte

Auto program for Bank(II)

Program Time .................................4ms (typ.)

Program Unit ................................. 128word/256byte

Auto Erase

Erase time

................................. 40 ms (typ.)

Erase Unit

Bank(I)

Bank(II)

PBMaoaroiantmBBellotoeccrkkBl.o...c...k..................................................311266KKKwwwooorrrddd///633422KKKbbbyyyttteee

x

x

x

1

7

28

.........................................

Program/Erase cycles

100Kcycles

Boot Block

M6MGB160S2BVP ........................ Bottom Boot

M6MGT160S2BVP ........................ Top Boot

Other Functions

Soft Ware Command Control

Selective Block Lock

Erase Suspend/Resume

Program Suspend/Resume

Status Register Read

Alternating Back Ground Program/Erase Operation

Between Bank(I) and Bank(II)

3

Sep. 1999 , Rev.2.0

Share Link: