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M54HC32D1 データシートの表示(PDF) - STMicroelectronics

部品番号
コンポーネント説明
一致するリスト
M54HC32D1
ST-Microelectronics
STMicroelectronics ST-Microelectronics
M54HC32D1 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
M54HC32
CAPACITIVE CHARACTERISTICS
Test Condition
Value
Symbol
Parameter
VCC
(V)
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
CIN Input Capacitance 5.0
5 10
10
10 pF
CPD Power Dissipation
Capacitance (note 5.0
21
pF
1)
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/4 (per gate)
TEST CIRCUIT
CL = 50pF or equivalent (includes jig and probe capacitance)
RT = ZOUT of pulse generator (typically 50)
WAVEFORM: PROPAGATION DELAY TIME (f=1MHz; 50% duty cycle)
4/7

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