M54HC21K1 データシートの表示（PDF） - STMicroelectronics

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M54HC21K1

RAD-HARD DUAL 4-INPUT AND GATE

STMicroelectronics 

M54HC21

AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns)

Test Condition

Value

Symbol

Parameter

VCC

(V)

tTLH tTHL Output Transition 2.0

Time

4.5

6.0

tPLH tPHL Propagation Delay 2.0

Time

4.5

6.0

TA = 25°C

-40 to 85°C -55 to 125°C Unit

Min. Typ. Max. Min. Max. Min. Max.

30 75

95

110

8 15

19

22 ns

7 13

16

19

40 100

125

150

13 20

25

30 ns

11 17

21

26

CAPACITIVE CHARACTERISTICS

Test Condition

Value

Symbol

Parameter

VCC

(V)

TA = 25°C

-40 to 85°C -55 to 125°C Unit

Min. Typ. Max. Min. Max. Min. Max.

CIN Input Capacitance 5.0

5 10

10

10 pF

CPD Power Dissipation

Capacitance (note 5.0

25

pF

1)

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without

load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/4 (per gate)

TEST CIRCUIT

CL = 50pF or equivalent (includes jig and probe capacitance)

RT = ZOUT of pulse generator (typically 50Ω)

4/8

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