M54HC20D1 データシートの表示（PDF） - STMicroelectronics

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M54HC20D1

RAD-HARD DUAL 4-INPUT NAND GATE

STMicroelectronics 

M54HC20

RAD-HARD DUAL 4-INPUT NAND GATE

s HIGH SPEED:

tPD = 9ns (TYP.) at VCC = 6V

s LOW POWER DISSIPATION:

ICC = 1µA(MAX.) at TA=25°C

s HIGH NOISE IMMUNITY:

VNIH = VNIL = 28% VCC (MIN.)

s SYMMETRICAL OUTPUT IMPEDANCE:

|IOH| = IOL = 4mA (MIN) at VCC = 4.5V

s BALANCED PROPAGATION DELAYS:

tPLH ≅ tPHL

s WIDE OPERATING VOLTAGE RANGE:

VCC (OPR) = 2V to 6V

s PIN AND FUNCTION COMPATIBLE WITH

54 SERIES 20

s SPACE GRADE-1: ESA SCC QUALIFIED

s 50 krad QUALIFIED, 100 krad AVAILABLE ON

REQUEST

s NO SEL UNDER HIGH LET HEAVY IONS

IRRADIATION

s DEVICE FULLY COMPLIANT WITH

SCC-9201-118

DESCRIPTION

The M54HC20 is an high speed CMOS DUAL

4-INPUT NAND GATE fabricated with silicon gate

C2MOS technology.

DILC-14

FPC-14

ORDER CODES

PACKAGE

FM

DILC

FPC

M54HC20D

M54HC20K

EM

M54HC20D1

M54HC20K1

The internal circuit is composed of 3-stage

including buffered output, which gives high noise

immunity and stable output.

All inputs are equipped with protection circuits

against static discharge and transient excess

voltage.

PIN CONNECTION

April 2004

1/8

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