M36W216BI データシートの表示（PDF） - STMicroelectronics

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M36W216BI

16 Mbit 1Mb x16 / Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM / Multiple Memory Product

STMicroelectronics 

M36W216TI, M36W216BI

Table 6. DC Characteristics

Symbol

Parameter

Device

Test Condition

Min Typ Max Unit

ILI Input Leakage Current Flash & SRAM

ILO Output Leakage Current

Flash

SRAM

0V ≤ VIN ≤ VDDQF

0V ≤ VOUT ≤ VDDQF

0V ≤ VOUT ≤ VDDQF,

SRAM Outputs Hi-Z

±1 µA

±10 µA

±1 µA

IDDS VDD Standby Current

Flash

SRAM

EF = VDDQF ± 0.2V

RPF = VDDQ ± 0.2V

E1S ≥ VDDS – 0.2V

VIN ≥ VDDS − 0.2V or VIN ≤

0.2V

15 50 µA

5

15 µA

IDDD Supply Current (Reset)

Flash

RPF = VSSF ± 0.2V

15 50 µA

IDD Supply Current

SRAM

VDDS = 3.3V,

IOUT = 0 mA, f = 1MHz

VDDS = 3.3V,

IOUT = 0 mA, f = fMAX = 1/tAVAV

1.5 3 mA

7

15 mA

IDDR Supply Current (Read)

Flash

EF = VIL, GF = VIH, f = 5 MHz

10 20 mA

IDDW

Supply Current

(Program)

Flash

Program in progress

VPPF = 12V ± 5%

Program in progress

VPPF = VDDF

10 20 mA

10 20 mA

IDDE Supply Current (Erase)

Flash

Erase in progress

VPPF = 12V ± 5%

Erase in progress

VPPF = VDDF

5

20 mA

5

20 mA

Supply Current

IDDES (Program/Erase

Suspend)

Flash

EF = VDDQF ± 0.2V,

Erase suspended

50 µA

IPP1

Program Current

(Read or Standby)

Flash

VPPF > VDDF

400 µA

IPP2

Program Current

(Read or Standby)

Flash

VPPF ≤ VDDF

5

µA

IPPR Program Current (Reset)

Flash

RPF = VSSF ± 0.2V

5

µA

IPPW

Program Current

(Program)

Flash

VPPF = 12V ± 0.5V

Program in progress

VPPF = VDDF

Program in progress

10 mA

5 mA

IPPE Program Current (Erase)

Flash

VPPF = 12V ± 0.5V

Erase in progress

VPPF = VDDF

Erase in progress

10 mA

5

µA

VIL Input Low Voltage

Flash & SRAM

VDDQF = VDDS ≥ 2.7V

–0.3

0.6 V

VIH Input High Voltage

Flash & SRAM

VDDQF = VDDS ≥ 2.7V

0.7VDDQF

VDDQF

+0.3

V

13/62

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