M2V64S20BTP データシートの表示（PDF） - MITSUBISHI ELECTRIC

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M2V64S20BTP

64M bit Synchronous DRAM

MITSUBISHI ELECTRIC  

SDRAM (Rev.1.2)

Apr. '99

64M bit Synchronous DRAM

MITSUBISHI LSIs

M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT)

M2V64S30BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 2097152-WORD x 8-BIT)

M2V64S40BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 1048576-WORD x 16-BIT)

BURST INTERRUPTION

[ Read Interrupted by Read ]

Burst read operation can be interrupted by new read of any bank. Random column access

is allowed. READ to READ interval is minimum 1 CLK.

Read Interrupted by Read (BL=4, CL=3)

CLK

Command

READ READ

READ

READ

A0-9

Yi Yj

Yk

Yl

A10

0

0

0

0

A11

BA0,1

00 00

10

01

DQ

Qai0 Qaj0 Qaj1 Qbk0 Qbk1 Qbk2 Qal0 Qal1 Qal2 Qal3

[ Read Interrupted by Write ]

Burst read operation can be interrupted by write of any bank. Random column access is

allowed. In this case, the DQ should be controlled adequately by using the DQM to prevent

the bus contention. The output is disabled automatically 1 cycle after WRITE assertion.

Read Interrupted by Write (BL=4, CL=3)

CLK

Command

READ

Write

A0-9

Yi

Yj

A10

0

0

A11

BA0,1

00

DQM(x4,x8)

DQMU/L(x16)

Q

D

00

Qai0

Daj0 Daj1 Daj2 Daj3

DQM control Write control

MITSUBISHI ELECTRIC

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