LX5512B(2004) データシートの表示（PDF） - Microsemi Corporation
部品番号
コンポーネント説明
一致するリスト
LX5512B Datasheet PDF : 6 Pages
| |||
LX5512B
TM
®
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
ABSOLUTE MAXIMUM RATINGS
DC Supply Voltage, RF off......................................................................................................7V
Collector Current..............................................................................................................500mA
Total Power Dissipation ......................................................................................................... 2W
RF Input Power .................................................................................................................. 5dBm
Operation Ambient Temperature ............................................................................ -40 to +85oC
Storage Temperature............................................................................................ -60 to +150oC
Package Peak Temp for Solder Reflow (40 Seconds Maximum Exposure)..........255°C(+5, -0)
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal.
PACKAGE PIN OUT
VC3
RF OUT
RF OUT
DET
13 14 15 16
12
1
11
2
10
e3
9
8
76
4
5
N/C
N/C
RF IN
N/C
THERMAL DATA
LQ Plastic MLPQ 16-Pin
THERMAL RESISTANCE-JUNCTION TO CASE, θJC
THERMAL RESISTANCE-JUNCTION TO AMBIENT, θJA
10°C/W
50°C/W
Junction Temperature Calculation: TJ = TA + (PD x θJA).
The θJA numbers are guidelines for the thermal performance of the device/pc-board system. All of the
above assume no ambient airflow.
LQ PACKAGE
(Bottom View)
Pb-free 100% Matte Tin Lead Finish
Name
RF IN
VB12
VB3
VCC
RF OUT
VC1
VC2
VC3
REF
DET
GND
FUNCTIONAL PIN DESCRIPTION
Description
RF input for the power amplifier. This pin is directly connected to base, a 10pF decoupling capacitor may be
needed.
Bias current control voltage for the first and second stage.
Bias current control voltage for the third stage. The VB3 pin can be connected with the first and second stage
control voltage (VB12) into a single reference voltage (referred to as VREF) through an external resistor bridge.
Supply voltage for the bias reference and control circuits. The VCC feed line should be terminated with a 10nF
bypass capacitor close to connector pin. This pin can be combined with VC1, VC2 and VC3 pins, resulting in a
single supply voltage (referred to as VC).
RF output for the power amplifier. This pin is DC-decoupled from the transistor collector of the third stage.
Power supply for first stage amplifier. The VC1 feed line should be terminated with a 10pF bypass capacitor,
followed by a 36 Ohm resistor. This pin can be combined with VC2,VC3 and VCC pins, resulting in a single
supply voltage (referred to as VC).
Power supply for second stage amplifier. The VC2 feed line should be terminated with a 18pF bypass capacitor.
This pin can be combined with VC1,VC3 and VCC pins, resulting in a single supply voltage (referred to as VC).
Power supply for the third stage amplifier. The VC3 feed line should be terminated with 27 pF and 10 nF bypass
capacitors. This pin can be combined with VC1,VC2 and VCC pins, resulting in a single supply voltage (referred
to as VC).
Power detector reference output pin should be terminated with a 100KΩ loading resistor
Power detector output pin should be terminated with a 100KΩ loading resistor
The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power
amplifier.
Copyright © 2004
Rev. 1.0, 2004-06-23
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
Share Link: 