LU1004D データシートの表示（PDF） - Unspecified

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LU1004D

High Performance N-Ch Vertical POWERJFET™ with PN Diode

Unspecified 

Thermal Resistance

Symbol

Parameter

RΘJA Thermal Resistance Junction-to-Ambient

RΘJC Thermal Resistance Junction-to-Case

IPAK

Ratings

80

1.6

Electrical Specifications

(TA = +25°C, unless otherwise noted.)

The φ denotes a specification which apply over the full operating temperature range.

Symbol

Parameter

Conditions

Min.

Static

BVDSX Breakdown Voltage

ID = 0.5 mA

24

Drain to Source

VGS= -4 V

BVGDO Breakdown Voltage

IG = -50µA

Gate to Drain

BVGSO

RDS(ON)

Breakdown Voltage

Gate to Source

Static Drain to Source1 On

Resistance (Current flows

drain-to-source) See Fig. 1

IG = -1 mA

IG = 40 mA, ID=10A

IG = 10 mA, ID=10A

IG = 5 mA, ID=10A

VGS(TH) Gate Threshold Voltage

VDS=0.1 V, ID=250µA

Dynamic

QG

Total Gate Charge

QGD

Gate to Drain Charge

QGS

Gate to Source Charge

QSW

Switching Charge

RG

Gate Resistance

∆VDrive =5V, ID=10A,VDS=15V

TD(ON)

TR

TD(OFF)

TF

CISS

COSS

CGS

CGD

CDS

Turn-on Delay Time

Rise Time

Turn-off Delay

Fall Time

Input Capacitance

Output Capacitance

Gate-Source Capacitance

Gate-Drain Capacitance

Drain-Source Capacitance

VDD=16V, ID=15A

VDrive = 5 V

Clamped Inductive Load

VDS=10V, VGS= -5 V, 1MHz.

Typ.

-12

3.5

4.0

4.1

-900

20

12

1.5

13.5

1

5

12

2

10

3000

900

2250

750

150

PN Diode

IR

Reverse Leakage

VF

Forward Voltage

VF

Forward Voltage

VF

Forward Voltage

Qrr

Reverse Recovery Charge

Notes:

1. Pulse width <= 500µs, duty cycle < = 2%

VR=20V, Vgs = -4V

IF = 1 A

IF = 10 A

IF = 20 A

Is = 20 A di/dt = 100A/us,

0.25

700

900

1100

20

Units

°C/W

°C/W

Max. Units

V

-28

V

-10

V

4.0

mΩ

4.5

mΩ

mV

nC

nC

nC

nC

Ω

ns

pF

0.3 mA

mV

mV

mV

nC

2

LU1004D

Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA

Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com

Product Specification

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