CMXD6001(2010) データシートの表示（PDF） - Central Semiconductor

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CMXD6001
(Rev.:2010)

SURFACE MOUNT TRIPLE ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES

Central Semiconductor 

CMXD6001

SURFACE MOUNT

TRIPLE ISOLATED

LOW LEAKAGE

SILICON SWITCHING DIODES

SOT-26 CASE

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMXD6001 type

contains three (3) Isolated Silicon Switching Diodes,

manufactured by the epitaxial planar process, epoxy

molded in a SUPERmini™ surface mount package, and

designed for switching applications requiring extremely

low leakage.

MARKING CODE: X01

MAXIMUM RATINGS: (TA=25°C)

Continuous Reverse Voltage

Peak Repetitive Reverse Voltage

Continuous Forward Current

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=1.0μs

Peak Forward Surge Current, tp=1.0s

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VR

VRRM

IF

IFRM

IFSM

IFSM

PD

TJ, Tstg

ΘJA

75

100

250

250

4.0

1.0

350

-65 to +150

357

ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

IR

VR=75V

500

BVR

IR=100μA

100

VF

IF=1.0mA

0.85

VF

IF=10mA

0.95

VF

IF=100mA

1.1

CT

VR=0, f=1.0MHz

2.0

trr

IR=IF=10mA, Irr=1.0mA, RL=100Ω

3.0

UNITS

V

V

mA

mA

A

A

mW

°C

°C/W

UNITS

pA

V

V

V

V

pF

μs

R3 (12-February 2010)

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