LL4148-M データシートの表示（PDF） - Vishay Semiconductors
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LL4148-M Datasheet PDF : 4 Pages
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LL4148-M
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Note
1) Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
IF = 50 mA
VR = 20 V
VR = 20 V, Tj = 150 °C
VR = 75 V
IR = 100 µA, tp/T = 0.01,
tp = 0.3 ms
VR = 0, f = 1 MHz,
VHF = 50 mV
IF = IR = 10 mA,
iR = 1 mA
IF = 10 mA, VR = 6 V,
iR = 0.1 x IR, RL = 100 Ω
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
1000
LL4148-M
100
Scattering Limit
10
1
Tj = 25 °C
0.1
0
0.4
0.8
1.2
1.6 2.0
94 9096-1
VF - Forward Voltage (V)
Figure 1. Forward Current vs. Forward Voltage
Symbol
Value
Unit
RthJA
Tj
Tstg
300 1)
175
- 65 to + 175
K/W
°C
°C
Symbol
Min.
Typ.
Max.
Unit
VF
860
1000
mV
IR
25
nA
IR
50
µA
IR
5
µA
V(BR)
100
V
CD
4
pF
trr
8
ns
trr
4
ns
1000
Tj = 25 °C
100
Scattering Limit
10
1
1
10
100
94 9098
VR- Reverse Voltage (V)
Figure 2. Reverse Current vs. Reverse Voltage
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2
For technical questions within your region, please contact one of the following: Document Number 81162
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.1, 01-Sep-10
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