LIS3L02AL データシートの表示（PDF） - STMicroelectronics
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LIS3L02AL Datasheet PDF : 17 Pages
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Mechanical and electrical specifications
LIS3L02AL
2. Typical specifications are not guaranteed
3. Guaranteed by wafer level test and measurement of initial offset and sensitivity
4. Zero-g level and sensitivity are essentially ratiometric to supply voltage
5. Guaranteed by design
6. Contribution to the measuring output of the inclination/acceleration along any perpendicular axis
7. Self test “output voltage change” is defined as Vout(Vst=Logic1)-Vout(Vst=Logic0)
8. Self test “output voltage change” varies cubically with supply voltage
9. Minimum resonance frequency Fres=1.5kHz. Sensor bandwidth=1/(2*π*110kΩ*Cload) with Cload>1nF.
2.2
Table 3.
Symbol
Electrical Characteristics
Electrical Characteristics(1)
(Temperature range -40°C to +85°C) All the parameters are specified @ Vdd =3.3V, T=25°C
unless otherwise noted
Parameter
Test Condition
Min.
Typ.(2)
Max. Unit
Vdd
Supply Voltage
Idd
Supply Current
mean value
2.4
3.3
3.6
V
0.85
1.5
mA
Vst
Rout
Cload
Self Test Input
Logic 0 level
Logic 1 level
Output Impedance
Capacitive Load Drive(3)
0
0.3*Vdd V
0.7*Vdd
Vdd
V
80
110
140
kΩ
1
nF
Top
Operating Temperature
Range
-40
+85
°C
1. The product is factory calibrated at 3.3V
2. Typical specifications are not guaranteed
3. Minimum resonance frequency Fres=1.5kHz. Sensor bandwidth=1/(2*π*110kΩ*Cload) with Cload>1nF
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