CM50TF-28H データシートの表示（PDF） - MITSUBISHI ELECTRIC

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CM50TF-28H

MEDIUM POWER SWITCHING USE INSULATED TYPE

MITSUBISHI ELECTRIC  

MITSUBISHI IGBT MODULES

CM50TF-28H

MEDIUM POWER SWITCHING USE

INSULATED TYPE

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings

Symbol

Junction Temperature

Storage Temperature

Collector-Emitter Voltage (G-E-SHORT)

Gate-Emitter Voltage (C-E-SHORT)

Collector Current (TC = 25°C)

Peak Collector Current

Emitter Current** (TC = 25°C)

Peak Emitter Current**

Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)

Mounting Torque, M4 Main Terminal

Tj

Tstg

VCES

VGES

IC

ICM

IE

IEM

Pc

–

Mounting Torque, M5 Mounting

–

Weight

–

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)

Viso

*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Collector-Cutoff Current

Gate Leakage Current

Gate-Emitter Threshold Voltage

ICES

IGES

VGE(th)

VCE = VCES, VGE = 0V

VGE = VGES, VCE = 0V

IC = 5mA, VCE = 10V

Collector-Emitter Saturation Voltage

Total Gate Charge

VCE(sat)

QG

IC = 50A, VGE = 15V

IC = 50A, VGE = 15V, Tj = 150°C

VCC = 800V, IC = 50A, VGE = 15V

Emitter-Collector Voltage

VEC

IE = 50A, VGE = 0V

** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

CM50TF-28H

–40 to 150

–40 to 125

1400

±20

50

100*

50

100*

400

0.98 ~ 1.47

1.47 ~ 1.96

540

2500

Units

°C

°C

Volts

Volts

Amperes

Amperes

Amperes

Amperes

Watts

N·m

N·m

Grams

Vrms

Min.

Typ.

Max. Units

–

–

1.0

mA

–

–

0.5

µA

5.0

6.5

8.0

Volts

–

3.1

4.2** Volts

–

2.95

–

Volts

–

255

–

nC

–

–

3.8

Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max. Units

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Cies

Coes

Cres

VGE = 0V, VCE = 10V

–

–

10

nF

–

–

3.5 nF

–

–

2

nF

Resistive

Turn-on Delay Time

Load

Rise Time

Switching

Turn-off Delay Time

Times

Fall Time

Diode Reverse Recovery Time

Diode Reverse Recovery Charge

td(on)

tr

td(off)

tf

trr

Qrr

VCC = 800V, IC = 50A,

VGE1 = VGE2 = 15V, RG = 6.3Ω

IE = 50A, diE/dt = –100A/µs

IE = 50A, diE/dt = –100A/µs

–

–

100

ns

–

–

250

ns

–

–

150

ns

–

–

500

ns

–

–

300

ns

–

0.5

–

µC

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Thermal Resistance, Junction to Case

Rth(j-c)

Per IGBT

–

Thermal Resistance, Junction to Case

Rth(j-c)

Per FWDi

–

Contact Thermal Resistance

Rth(c-f)

Per Module, Thermal Grease Applied

–

Typ. Max. Units

–

0.31 °C/W

–

0.70 °C/W

–

0.033 °C/W

Sep.1998

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