L6382DTR(2005) データシートの表示（PDF） - STMicroelectronics
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L6382DTR Datasheet PDF : 14 Pages
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L6382D
Table 5. Electrical Characteristcs (continued)
Symbol Pin
Parameter
Test condition
min. typ
Source Current
LSG
120
Capability
HEG
70
PFG
250
TRISE 5, 9, 17 Rise time
Cload = 1nF
TBD
TFALL 5, 9, 17 Fall time
Cload = 1nF
TBD
TDELAY
Propagation delay (input LSG; high to low and low to
to output)
high
HEG; high to low and low to
high
PFG; high to low
PFG; low to high
RB
Pull down Resistor
LSG
20
HEG
50
PFG
10
HSG DRIVER (VOLTAGES REFERRED TO OUT)
VOH(HS)
12 HIGH Output Voltage
IHSG = 10 mA
VOUT -
0.5
VOL(HS)
12 LOW Output Voltage
IHSG = 10 mA
0.5
12 Sink Current Capability
120
12 Source Current
120
Capability
TRISE
12 Rise time
Cload = 1nF
TBD
TFALL
12 Fall time
Cload = 1nF
TBD
TDELAY
12 Propagation delay (LGI to high to low and low to high
LSG)
RB
12 Pull down Resistor
to OUT
20
HIGH-SIDE FLOATING GATE-DRIVER SUPPLY
ILKBOOT
11 VBOOT pin leakage VBOOT = 580V
current
ILKOUT
13 OUT pin leakage current VOUT = 562V
RDS(on)
Synchronous bootstrap VLVG = HIGH
100
diode on-resistance
Forward Voltage Drop at 10 mA forward current
1.9
Forward Current
at 5V forward voltage drop
25
max
300
200
250
200
300
5
5
2.4
UNIT
mA
ns
ns
ns
ns
ns
ns
KΩ
KΩ
KΩ
V
V
mA
mA
ns
ns
ns
KΩ
µA
µA
Ω
V
mA
6/14
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