KTC9016S データシートの表示（PDF） - KEC
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KTC9016S Datasheet PDF : 1 Pages
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SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
HF, VHF BAND AMPLIFIER APPLICATION.
FEATURES
Small Reverse Transfer Capacitance
: Cre=0.65pF(Typ.).
Low Noise Figure :NF=2.2dB(Typ.) at f=100MHz.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
VCBO
40
VCEO
30
VEBO
4
IC
20
Emitter Current
IE
-20
Collector Power Dissipation
PC *
350
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150
* PC : Package Mounted On 99.5% Alumina (10 8 0.6 )
UNIT
V
V
V
mA
mA
mW
KTC9016S
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
2
3
1
P
P
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
hFE Rank
BF Type Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Reverse Transfer Capacitance
Transition Frequency
Collector-Base Time Constant
Noise Figure
Power Gain
ICBO
IEBO
hFE (Note)
Cre
fT
CC rbb'
NF
Gpe
VCB=40V, IE=0
VEB=4V, IC=0
VCE=5V, IC=1mA
VCE=6V, f=1MHz, IE=0
VCE=6V, IC=1mA, f=200MHz
VCE=6V, IE=-1mA, f=30MHz
VCE=6V, IE=-1mA, f=100MHz
Note) hFE Classification F:54 80, G:72 108, H:97 146, I:130 198
MIN.
-
-
54
-
260
-
-
15
TYP.
-
-
-
-
-
-
2.2
-
MAX.
0.1
0.1
198
1.0
-
30
4.0
-
UNIT
A
A
pF
MHz
pS
dB
dB
2002. 9. 3
Revision No : 0
1/1
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