K9F1208D0A データシートの表示（PDF） - Samsung

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K9F1208D0A

64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

Samsung 

K9F1208D0A K9F1216D0A

K9F1208U0A K9F1216U0A

64M x 8 Bit / 32M x 16 Bit NAND Flash Memory

PRODUCT LIST

Part Number

K9F1208D0A-Y,P

K9F1216D0A-Y,P

K9F1208U0A-Y,P

K9F1208U0A-V,F

K9F1216U0A-Y,P

Vcc Range

2.4 ~ 2.9V

2.7 ~ 3.6V

Organization

X8

X16

X8

X16

FLASH MEMORY

PKG Type

TSOP1

TSOP1

TSOP1

WSOP1

TSOP1

FEATURES

• Voltage Supply

- 2.65V device(K9F12XXD0A) : 2.4~2.9V

- 3.3V device(K9F12XXU0A) : 2.7 ~ 3.6 V

• Organization

- Memory Cell Array

- X8 device(K9F1208X0A) : (64M + 2048K)bit x 8 bit

- X16 device(K9F1216X0A) : (32M + 1024K)bit x 16bit

- Data Register

- X8 device(K9F1208X0A) : (512 + 16)bit x 8bit

- X16 device(K9F1216X0A) : (256 + 8)bit x16bit

• Automatic Program and Erase

- Page Program

- X8 device(K9F1208X0A) : (512 + 16)Byte

- X16 device(K9F1216X0A) : (256 + 8)Word

- Block Erase :

- X8 device(K9F1208X0A) : (16K + 512)Byte

- X16 device(K9F1216X0A) : ( 8K + 256)Word

• Page Read Operation

- Page Size

- X8 device(K9F1208X0A) : (512 + 16)Byte

- X16 device(K9F1216X0A) : (256 + 8)Word

- Random Access : 12µs(Max.)

- Serial Page Access : 50ns(Min.)

• Fast Write Cycle Time

- Program time : 200µs(Typ.)

- Block Erase Time : 2ms(Typ.)

• Command/Address/Data Multiplexed I/O Port

• Hardware Data Protection

- Program/Erase Lockout During Power Transitions

• Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles

- Data Retention : 10 Years

• Command Register Operation

• Intelligent Copy-Back

• Unique ID for Copyright Protection

• Package

- K9F12XXX0A-YCB0/YIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F1208U0A-VCB0/VIB0

48 - Pin WSOP I (12X17X0.7mm)

- K9F12XXX0A-PCB0/PIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package

- K9F1208U0A-FCB0/FIB0

48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package

* K9F1208U0A-V,F(WSOPI ) is the same device as

K9F1208U0A-Y,P(TSOP1) except package type.

GENERAL DESCRIPTION

Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V

Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be

performed in typical 200µs on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in

typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per byte(X8

device) or word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command input. The on-

chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and

margining of data. Even the write-intensive systems can take advantage of the K9F12XXX0A′s extended reliability of 100K program/

erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F12XXX0A is an optimum solu-

tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

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