IXSM30N60 データシートの表示（PDF） - IXYS CORPORATION

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IXSM30N60

Low VCE(sat) IGBT High Speed IGBT

IXYS CORPORATION 

Symbol

gfs

IC(on)

Cies

Coes

Cres

Qg

Qge

Qgc

td(on)

tri

td(off)

tfi

Eoff

td(on)

tri

Eon

td(off)

tfi

Eoff

RthJC

RthCK

IXSH 30N60 IXSM 30N60

IXSH 30N60A IXSM 30N60A

Test Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

IC = IC90; VCE = 10 V,

Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

VGE = 15 V, VCE = 10 V

VCE = 25 V, VGE = 0 V, f = 1 MHz

IC = IC90, VGE = 15 V, VCE = 0.5 VCES

Inductive load, TJ = 25°C

IC = IC90, VGE = 15 V, L = 100 µH

VCE = 0.8 VCES, RG = 4.7 Ω

Remarks: Switching times

may increase for

30N60

30N60A

VCE (Clamp) > 0.8 • VCES,

higher TJ or increased RG

30N60

30N60A

Inductive load, TJ = 125°C

IC = IC90, VGE = 15 V,

L = 100 µH

VCE = 0.8 VCES,

RG = 4.7 Ω

Remarks: Switching times

may increase for

VCE (Clamp) > 0.8 • VCES,

higher TJ or increased RG

30N60

30N60A

30N60

30N60A

30N60

30N60A

7 13

S

100

A

2760

pF

240

pF

51

pF

110 150 nC

34 45 nC

47 63 nC

60

ns

130

ns

400

ns

400

ns

200

ns

5.0

mJ

2.5

mJ

60

ns

130

ns

1.0

mJ

540 1000 ns

340 525 ns

600 1500 ns

340 700 ns

12

mJ

6

mJ

0.63 K/W

0.25

K/W

TO-247 AD Outline

1 = Gate

2 = Collector

3 = Emitter

Tab = Collector

TO-204AE Outline

IXSH 30N60 and IXSH 30N60A characteristic curves are located on the

IXSH 30N60U1 and IXSH 30N60AU1 data sheets.

1 = Gate

2 = Emitter

Case = Collector

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592

4,850,072

4,881,106

4,931,844

5,017,508

5,034,796

5,049,961 5,187,117 5,486,715

5,063,307 5,237,481 5,381,025

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