IXTP180N055T データシートの表示（PDF） - IXYS CORPORATION
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IXTP180N055T Datasheet PDF : 5 Pages
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Symbol
g
fs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Q
g(on)
Qgs
Q
gd
RthJC
RthCK
IXTA 180N055T IXTP 180N055T
IXTQ 180N055T
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
V = 10 V; I = 50A, pulse test
DS
D
70 90
S
VGS = 0 V, VDS = 25 V, f = 1 MHz
5800
pF
1190
pF
138
pF
VGS = 10 V, VDS = 40 V, ID = 40A
RG = 5 Ω (External)
37
ns
61
ns
65
ns
36
ns
VGS= 10 V, VDS = 30 V, ID = 90 A
160
nC
46
nC
47
nC
(TO-3P)
(TO-220)
0.21
0.25
0.42 K/W
K/W
K/W
TO-3P (IXTQ) Outline
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. typ. Max.
IS
VGS = 0 V
180 A
I
Repetitive
SM
600 A
VSD
IF = 50 A, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.2 V
t
I = 25 A
rr
F
-di/dt = 100 A/µs
QRM
VR = 25 V
80
ns
0.4
µC
TO-220 (IXTP) Outline
TO-263 (IXTA) Outline
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
0.51 0.99
1.14 1.40
0.46 0.74
1.14 1.40
8.64 9.65
7.11 8.13
9.65 10.29
6.86 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .015
.018 .029
Pins: 1 - Gate
2 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
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