IRS21303D データシートの表示（PDF） - International Rectifier

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IRS21303D

3-PHASE BRIDGE DRIVER

International Rectifier 

IRS2130D/IRS21303D/IRS2132D (J&S)PbF

PRELIMINARY

1 Features Description

1.1 Integrated Bootstrap Functionality

The IRS213(0,03,2)D family embeds an integrated

bootstrap FET that allows an alternative drive of the

bootstrap supply for a wide range of applications.

There is one bootstrap FET for each channel and it is

connected between each of the floating supply (VB1,

VB2, VB3) and VCC (see Fig. 7).

The bootstrap FET of each channel follows the state

of the respective low side output stage (i.e., bootFet

is ON when LO is high, it is OFF when LO is low),

unless the VB voltage is higher than approximately

1.1(VCC). In that case the bootstrap FET stays off

until the VB voltage returns below that threshold (see

Fig. 8).

- at a very high PWM duty cycle due to the

bootstrap FET equivalent resistance (RBS,

see page 4).

In these cases, better performances can be achieved

by using the IRS213(0,03,2) non D version with an

external bootstrap network.

2 PCB Layout Tips

2.1 Distance from H to L Voltage

The IRS213(0,03,2)J package lacks some pins (see

page 8) in order to maximizing the distance between

the high voltage and low voltage pins. It’s strongly

recommended to place the components tied to the

floating voltage in the respective high voltage portions

of the device (VB1,2,3, VS1,2,3) side.

2.2 Ground Plane

To minimize noise coupling ground plane must not be

placed under or near the high voltage floating side.

2.3 Gate Drive Loops

Current loops behave like an antenna able to receive

and transmit EM noise (see Fig. 9). In order to reduce

EM coupling and improve the power switch turn on/off

performances, gate drive loops must be reduced as

much as possible. Moreover, current can be injected

inside the gate drive loop via the IGBT collector-to-

gate parasitic capacitance. The parasitic auto-

inductance of the gate loop contributes to develop a

voltage across the gate-emitter increasing the

possibility of self turn-on effect.

Fig. 7. Simplified BootFet Connection

Vth~17V

Vcc=15V

Phase voltage

LO

Bootstrap FET

state

BootFet

ON

BootFet

OFF

BootFet

ON

Fig. 8. State Diagram

Bootstrap FET is suitable for most PWM modulation

schemes and can be used either in parallel with the

external bootstrap network (diode + resistor) or as a

replacement of it. The use of the integrated bootstrap

as a replacement of the external bootstrap network

may have some limitations in the following situations:

- when used in non-complementary PWM

schemes (typically 6-step modulations)

VBX (V CC)

HOX ( LOX )

VSX ( Vs0 )

gate

resistance

IGC

CGC

Gate Drive

Loop

VGE

Fig. 9. Antenna Loops

2.4 Supply Capacitors

Supply capacitors must be placed as close as

possible to the device pins (VCC and VSS for the

ground tied supply, VB and VS for the floating supply)

in order to minimize parasitic inductance/resistance.

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