IRG4PC40KPBF データシートの表示（PDF） - International Rectifier

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IRG4PC40KPBF

INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT

International Rectifier 

IRG4PC40KPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V(BR)CES

V(BR)ECS

∆V(BR)CES/∆TJ

VCE(ON)

VGE(th)

∆VGE(th)/∆TJ

gfe

ICES

IGES

Parameter

Collector-to-Emitter Breakdown Voltage

Emitter-to-Collector Breakdown Voltage „

Temperature Coeff. of Breakdown Voltage

Collector-to-Emitter Saturation Voltage

Gate Threshold Voltage

Temperature Coeff. of Threshold Voltage

Forward Transconductance …

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

Min.

600

18

—

—

—

—

3.0

—

7.0

—

—

—

—

Typ. Max.

——

——

0.46 —

2.10 2.6

2.70 —

2.14 —

— 6.0

-13 —

14 —

— 250

— 2.0

— 2000

— ±100

Units

V

V

V/°C

V

mV/°C

S

µA

nA

Conditions

VGE = 0V, IC = 250µA

VGE = 0V, IC = 1.0A

VGE = 0V, IC = 1.0mA

IC = 25A

VGE = 15V

IC = 42A

See Fig.2, 5

IC = 25A , TJ = 150°C

VCE = VGE, IC = 250µA

VCE = VGE, IC = 250µA

VCE = 100 V, IC = 25A

VGE = 0V, VCE = 600V

VGE = 0V, VCE = 10V, TJ = 25°C

VGE = 0V, VCE = 600V, TJ = 150°C

VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Qg

Qge

Qgc

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

tsc

td(on)

tr

td(off)

tf

Ets

LE

Cies

Coes

Cres

Parameter

Total Gate Charge (turn-on)

Gate - Emitter Charge (turn-on)

Gate - Collector Charge (turn-on)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Short Circuit Withstand Time

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Switching Loss

Internal Emitter Inductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Min.

—

—

—

—

—

—

—

—

—

—

10

—

—

—

—

—

—

—

—

—

Typ. Max.

120 180

16 24

51 77

30 —

15 —

140 210

140 210

0.62 —

0.33 —

0.95 1.4

——

30 —

18 —

190 —

150 —

1.9 —

13 —

1600 —

130 —

55 —

Units

nC

ns

mJ

µs

ns

mJ

nH

pF

Conditions

IC = 25A

VCC = 400V

See Fig.8

VGE = 15V

TJ = 25°C

IC = 25A, VCC = 480V

VGE = 15V, RG = 10Ω

Energy losses include "tail"

See Fig. 9,10,14

VCC = 400V, TJ = 125°C

VGE = 15V, RG = 10Ω , VCPK < 500V

TJ = 150°C,

IC = 25A, VCC = 480V

VGE = 15V, RG = 10Ω

Energy losses include "tail"

See Fig. 11,14

Measured 5mm from package

VGE = 0V

VCC = 30V

See Fig. 7

ƒ = 1.0MHz

Notes:

 Repetitive rating; VGE = 20V, pulse width limited by

max. junction temperature. ( See fig. 13b )

‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω,

(See fig. 13a)

ƒ Repetitive rating; pulse width limited by maximum

junction temperature.

„ Pulse width ≤ 80µs; duty factor ≤ 0.1%.

… Pulse width 5.0µs, single shot.

2

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