HM624100HCJP-10 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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HM624100HCJP-10

4M High Speed SRAM (1-Mword × 4-bit)

Hitachi -> Renesas Electronics 

Operation Table

CS

OE

WE

H

×

×

L

H

H

L

L

H

L

H

L

L

L

L

Note: ×: H or L

HM624100HC Series

Mode

Standby

Output disable

Read

Write

Write

VCC current

ISB, ISB1

I CC

I CC

I CC

I CC

I/O

High-Z

High-Z

Dout

Din

Din

Ref. cycle

—

—

Read cycle (1) to (3)

Write cycle (1)

Write cycle (2)

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Supply voltage relative to VSS

Voltage on any pin relative to VSS

Power dissipation

Operating temperature

VCC

VT

PT

Topr

–0.5 to +7.0

V

–0.5*1 to VCC+0.5*2

V

1.0

W

0 to +70

°C

Storage temperature

Tstg

–55 to +125

°C

Storage temperature under bias

Tbias

–10 to +85

°C

Notes: 1. VT (min) = –2.0 V for pulse width (under shoot) 6 ns.

2. VT (max) = VCC + 2.0 V for pulse width (over shoot) 6 ns.

Recommended DC Operating Conditions (Ta = 0 to +70°C)

Parameter

Symbol Min

Typ

Supply voltage

VCC*3

4.5

5.0

VSS * 4

0

0

Input voltage

VIH

2.2

—

VIL

–0.5*1

—

Notes: 1. VIL (min) = –2.0 V for pulse width (under shoot) 6 ns.

2. VIH (max) = VCC + 2.0 V for pulse width (over shoot) 6 ns.

3. The supply voltage with all VCC pins must be on the same level.

4. The supply voltage with all VSS pins must be on the same level.

Max

5.5

0

VCC + 0.5*2

0.8

Unit

V

V

V

V

5

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