IN74HCT20 データシートの表示（PDF） - Integral Corp.

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IN74HCT20

DUAL 4-INPUT NAND GATE High-Performance Silicon-Gate CMOS

Integral Corp. 

IN74HCT20

DC ELECTRICAL CHARACTERISTICS(Voltages Referenced to GND)

VCC Guaranteed Limit

Symbol

Parameter

Test Conditions

V 25 °C ≤85 ≤125 Unit

to

°C °C

-55°C

VIH Minimum High- VOUT=0.1 V or VCC-0.1 V 4.5 2.0 2.0 2.0 V

Level

Input IOUT≤ 20 µA

5.5 2.0 2.0 2.0

Voltage

VIL Maximum Low - VOUT=0.1 V or VCC-0.1 V 4.5 0.8 0.8 0.8 V

Level

Input IOUT ≤ 20 µA

5.5 0.8 0.8 0.8

Voltage

VOH Minimum High- VIN= VIH or VIL 4.5 4.4 4.4 4.4 V

Level

Output IOUT ≤ 20 µA

5.5 5.4 5.4 5.4

Voltage

VIN= VIH or VIL

IOUT ≤ 4.0 mA

4.5 3.98 3.84 3.7

VOL Maximum Low- VIN=VIH

4.5 0.1 0.1 0.1 V

Level

Output IOUT ≤ 20 µA

5.5 0.1 0.1 0.1

Voltage

VIN=VIH

IOUT ≤ 4.0 mA

4.5 0.26 0.33 0.4

IIN

Maximum Input VIN=VCC or GND

Leakage Current

5.5 ±0.1 ±1.0 ±1.0 µA

ICC Maximum

VIN=VCC or GND 5.5 2.0 20 40 µA

Quiescent Supply IOUT=0µA

Current

(per Package)

∆ICC Quiescent

VIN=2.4 V,Any One

Additional Supply Input

Current

VIN=VCC or GND, Other

Inputs

≥-55 25 °C to mA

°C

125°C

IOUT=0µA

5.5 2.9

2.4

3

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