IN74HCT00A データシートの表示（PDF） - Integral Corp.

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IN74HCT00A

Quad 2-Input NAND Gate High-Performance Silicon-Gate CMOS

Integral Corp. 

IN74HCT00A

DC ELECTRICAL CHARACTERISTICS(Voltages Referenced to GND)

Symbol

Parameter

Test Conditions

VCC Guaranteed Limit

V 25 °C ≤85 ≤125 Unit

to

°C °C

-55°C

VIH Minimum High-Level VOUT=0.1 V or VCC-0.1 V

4.5 2.0 2.0 2.0

V

Input Voltage

IOUT≤ 20 µA

5.5 2.0 2.0 2.0

VIL Maximum Low -

VOUT= VCC-0.1 V

Level Input Voltage IOUT ≤ 20 µA

VOH Minimum High-Level VIN=VIH or VIL

Output Voltage

IOUT ≤ 20 µA

VIN=VIH or VIL

IOUT ≤ 4.0 mA

VOL Maximum Low-Level VIN=VIH

Output Voltage

IOUT ≤ 20 µA

4.5 0.8 0.8 0.8 V

5.5 0.8 0.8 0.8

4.5 4.4 4.4 4.4 V

5.5 5.4 5.4 5.4

4.5 3.98 3.84 3.7

4.5 0.1 0.1 0.1 V

5.5 0.1 0.1 0.1

IIN

Maximum Input

Leakage Current

VIN=VIH

IOUT ≤ 4.0 mA

VIN=VCC or GND

4.5 0.26 0.33 0.4

5.5 ±0.1 ±1.0 ±1.0 µA

ICC

Maximum Quiescent VIN=VCC or GND

Supply Current

IOUT=0µA

(per Package)

5.5 1.0 10 40 µA

∆ICC Additional Quiescent VIN = 2.4 V, Any One Input

Supply Current

≥-55°C 25°C to mA

125°C

VIN=VCC or GND, Other

5.5

2.9

2.4

Inputs

IOUT=0µA

9

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