Q67040-S4513 データシートの表示（PDF） - Unspecified

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Q67040-S4513

Low Loss IGBT in Trench and Fieldstop technology

Unspecified 

Preliminary

TrenchStoP Series

IGW08T120

Thermal Resistance

Parameter

Characteristic

IGBT thermal resistance,

junction – case

Thermal resistance,

junction – ambient

Symbol

RthJC

RthJA

Conditions

TO-247AC

Max. Value

Unit

1.7

K/W

40

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Static Characteristic

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Gate-emitter threshold voltage

Zero gate voltage collector current

Gate-emitter leakage current

Transconductance

Integrated gate resistor

V(BR)CES

VCE(sat)

VGE(th)

ICES

VGE=0V, IC=0.5mA

VGE = 15V, IC=8A

Tj=25°C

Tj=125°C

Tj=150°C

IC=0.3mA,VCE=VGE

VCE=1200V,

VGE=0V

Tj=25°C

Tj=150°C

IGES

gfs

RGint

VCE=0V,VGE=20V

VCE=20V, IC=8A

min.

1200

-

-

-

5.0

-

-

-

-

Value

typ.

-

1.7

2.0

2.2

5.8

-

-

-

5

none

Unit

max.

-V

2.2

-

-

6.5

mA

0.2

2.0

100 nA

-S

Ω

Power Semiconductors

2

Preliminary / Rev. 1 Sep-03

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