IDT7134LA35C データシートの表示（PDF） - Integrated Device Technology

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IDT7134LA35C

HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM

Integrated Device Technology 

IDT7134SA/LA

HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM

MILITARY AND COMMERCIAL TEMPERATURE RANGES

DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES

(LA Version Only) VLC = 0.2V, VHC = VCC - 0.2V

Symbol

Parameter

Test Condition

Min. Typ.(1)

VDR

ICCDR

tCDR(3)

tR(3)

VCC for Data Retention

Data Retention Current

Chip Deselect to Data Retention Time

Operation Recovery Time

VCC = 2V

CE ≥ VHC

VIN ≥ VHC or < VLC

2.0

—

MIL.

—

100

COM’L. —

100

0

—

tRC(2)

—

NOTES:

1. VCC = 2V, TA = +25°C, and are not production tested.

2. tRC = Read Cycle Time.

3. This parameter is guaranteed by device characterization, but not production tested.

Max.

—

4000

1500

—

—

Unit

V

µA

ns

ns

2720 tbl 07

DATA RETENTION WAVEFORM

VCC

4.5V

tCDR

CE

VIH

DATA RETENTION MODE

VDR ≥ 2V

VDR

4.5V

tR

VIH

2720 drw 05

AC TEST CONDITIONS

Input Pulse Levels

Input Rise/Fall Times

Input Timing Reference Levels

Output Reference Levels

Output Load

GND to 3.0V

5ns

1.5V

1.5V

Figures 1 and 2

2720 tbl 08

DATAOUT

775Ω

+5V

1250Ω

30pF *

2720 drw 06

Figure 1. AC Output Test Load

DATAOUT

775Ω

+5V

1250Ω

5pF *

2720 drw 07

Figure 2. Output Test Load

(for tLZ, tHZ, tWZ, tOW)

*Including scope and jig

6.04

4

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