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IDT70V08S35PF データシートの表示(PDF) - Integrated Device Technology

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一致するリスト
IDT70V08S35PF
IDT
Integrated Device Technology IDT
IDT70V08S35PF Datasheet PDF : 20 Pages
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IDT70V08S/L
High-Speed 64K x 8 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage(5,6)
70V08X15
Com'l Only
70V08X20
Com'l Only
Symbol
Parameter
Min. Max. Min. Max. Unit
WRITE CYCLE
tWC
Write Cycle Time
15
____
20
____
ns
tEW
Chip Enable to End-of-Write(3)
12
____
15
____
ns
tAW
Address Valid to End-of-Write
12
____
15
____
ns
tAS
Address Set-up Time(3)
0
____
0
____
ns
tWP
Write Pulse Width
12
____
15
____
ns
tWR
Write Recovery Time
0
____
0
____
ns
tDW
Data Valid to End-of-Write
10
____
15
____
ns
tHZ
Output High-Z Time(1,2)
____
10
____
10
ns
tDH
Data Hold Time(4)
0
____
0
____
ns
tWZ
Write Enable to Output in High-Z(1,2)
____
10
____
10
ns
tOW
Output Active from End-of-Write(1,2,4)
0
____
0
____
ns
tSWRD
SEM Flag Write to Read Time
5
____
5
____
ns
tSPS
SEM Flag Contention Window
5
____
5
____
ns
3740 tbl 13a
70V08X25
Com'l Only
70V08X35
Com'l Only
Symbol
Parameter
Min. Max. Min. Max. Unit
WRITE CYCLE
tWC
Write Cycle Time
25
____
35
____
ns
tEW
Chip Enable to End-of-Write(3)
20
____
30
____
ns
tAW
Address Valid to End-of-Write
20
____
30
____
ns
tAS
Address Set-up Time(3)
0
____
0
____
ns
tWP
Write Pulse Width
20
____
25
____
ns
tWR
Write Recovery Time
0
____
0
____
ns
tDW
Data Valid to End-of-Write
15
____
20
____
ns
tHZ
Output High-Z Time(1,2)
____
15
____
20
ns
tDH
Data Hold Time(4)
0
____
0
____
ns
tWZ
Write Enable to Output in High-Z(1,2)
____
15
____
20
ns
tOW
Output Active from End-of-Write(1,2,4)
0
____
0
____
ns
tSWRD
SEM Flag Write to Read Time
5
____
5
____
ns
tSPS
SEM Flag Contention Window
5
____
5
____
ns
NOTES:
3740 tbl 13b
1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranted by device characterization, but is not production tested.
3. To access RAM, CE= VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time.
4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage and
temperature, the actual tDH will always be smaller than the actual tOW.
5. 'X' in part numbers indicates power rating (S or L).
6 Industrial temperature: for specific speeds, packages and powers contact your sales office.
9

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