IDT7014S35J データシートの表示（PDF） - Integrated Device Technology

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IDT7014S35J

HIGH-SPEED 4K x 9 DUAL-PORT STATIC RAM

Integrated Device Technology 

IDT7014S

HIGH-SPEED 4K x 9 DUAL-PORT STATIC RAM

MILITARY AND COMMERCIAL TEMPERATURE RANGES

AC ELECTRICAL CHARACTERISTICS OVER THE

OPERATING TEMPERATURE AND SUPPLY VOLTAGE

7014S12 7014S15

7014S20

7014S25 7014S35

Symbol

Parameter

READ CYCLE

tRC

Read Cycle Time

tAA

Address Access Time

tAOE Output Enable Access Time

tOH

Output Hold from Address Change

tLZ

Output Low-Z Time(1, 2)

tHZ

Output High-Z Time(1, 2)

Com'l. Only Com'l. Only

Mil. Only

Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit

12

— 15 — 20 — 25 — 35 —

ns

—

12 — 15 —

20 — 25 — 35

ns

—

8—

8

—

10 — 12 — 20

ns

3

—3

—3

—3— 3—

ns

3

—3

—3

—3— 3—

ns

—

7—

7—

9

— 11 — 15

ns

NOTES:

1. Transition is measured ±200mV from Low or High-impedance voltage with Output Test Load (Figure 2).

2. This parameter is determined by device characterization, but is not production tested.

2528 tbl 08

TIMING WAVEFORM OF READ CYCLE NO. 1, EITHER SIDE(1,2)

ADDRESS

DATAOUT

tRC

tAA

tOH

PREVIOUS DATA VALID

tOH

DATA VALID

TIMING WAVEFORM OF READ CYCLE NO. 2, EITHER SIDE(1, 3)

OE

DATAOUT

tAOE

tLZ

tHZ

VALID DATA

NOTES:

1. R/W = VIH for Read Cycles.

2. OE = VIL.

3. Addresses valid prior to OE transition LOW.

2528 drw 07

2528 drw 08

6.11

4

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