HY57V161610ET-I データシートの表示（PDF） - Hynix Semiconductor

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HY57V161610ET-I

2 Banks x 512K x 16 Bit Synchronous DRAM

Hynix Semiconductor 

HY57V161610ET-I

DC CHARACTERISTICS II (TA= -40°C to 85°C, VDD=3.0V to 3.6V, VSS=0VNote1,2)

Parameter

Symbol

Test Condition

Speed

Unit Note

-5

-55

-6

-7

-8

-10

-15

Operating Current

IDD1

Burst Length=1, One bank active

tRAS ≥ tRAS(min),tRP ≥ tRP(min),

IO=0mA

130 130 120

110

110 110 100

mA

2

Precharge Standby

Current

in power down mode

IDD2P

IDD2PS

CKE ≤ VIL(max), tCK = 15ns

CKE ≤ VIL(max), tCK = ∞

2

mA

1

CKE ≥ VIH(min), CS ≥ VIH(min), tCK =

15ns

Precharge Standby

IDD2N

Input signals are changed one time

25

Current

in non power down

during 2Clks. All other pins ≥ VDD-0.2V

or ≤ 0.2V

mA

mode

IDD2NS

CKE ≥ VIH(min), tCK = ∞

Input signals are stable.

15

Active Standby Current

in power down mode

IDD3P

IDD3PS

CKE ≤ VIL(max), tCK = min

CKE ≤ VIL(max), tCK = ∞

3.0

mA

3.0

CKE ≥ VIH(min), CS ≥ VIH(min), tCK =

min

Active Standby Current

in non power down

mode

IDD3N

Input signals are changed one time

during 2CLKs. All other pins ≥ VDD-

0.2V or ≤ 0.2V

50

mA

IDD3NS

CKE ≥ VIH(min), tCK = ∞

Input signals are stable

30

Burst Mode Operating

Current

IDD4

tCK ≥ tCK(min),

tRAS ≥ tRAS(min),

IO=0mA

All banks active

CL=3

130 130 120

110

110

90

80

CL=2

-

-

110

110

-

-

-

mA

3

CL=1

-

-

-

-

-

-

70

Auto Refresh Current IDD5

tRRC ≥ tRRC(min), All banks active

130 130 110

110

110 110 100

mA

Self Refresh Current

IDD6

CKE ≤ 0.2V

2

mA

Note :

1.VDD(min) is 3.15V when HY57V161610ET-7I operates at CAS latency=2 and tCK2=8.9ns.

2.VDD(min) of HY57V161610ET-5I/55I is 3.15V

3.IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open.

Rev. 0.1 / Nov. 2003

6

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