HY57V161610D-I データシートの表示（PDF） - Hynix Semiconductor

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HY57V161610D-I

2 Banks x 512K x 16 Bit Synchronous DRAM

Hynix Semiconductor 

ABSOLUTE MAXIMUM RATINGS

HY57V161610D-I

Parameter

Ambient Temperature

Storage Temperature

Voltage on Any Pin relative to VSS

Voltage on VDD relative to VSS

Short Circuit Output Current

Power Dissipation

Soldering Temperature·Time

Symbol

TA

TSTG

VIN, VOUT

VDD

IOS

PD

TSOLDER

Rating

- 40 ~ 85

-55 ~ 125

-1.0 ~ 4.6

-1.0 ~ 4.6

50

1

260·10

Note : Operation at above absolute maximum rating can adversely affect device reliability.

DC OPERATING CONDITION (TA= -40°C to 85°C)

Unit

°C

°C

V

V

mA

W

°C ·Sec

Parameter

Power Supply Voltage

Input high voltage

Input low voltage

Symbol

VDD, VDDQ

VIH

VIL

Min

Typ.

Max

Unit

3.0

3.3

3.6

V

2.0

3.0

VDD + 0.3

V

-0.5

0

0.8

V

Note :

1.All voltages are referenced to VSS = 0V.

2.VDD(min) is 3.15V when HY57V161610DTC-7I operates at CAS latency=2

3.VIH(max) is acceptable 4.6V AC pulse width with ≤ 10ns of duration.

4.VIL(min) is acceptable -1.5V AC pulse width with ≤ 10ns of duration.

Note

1, 2

1, 4

1, 5

AC OPERATING CONDITION (TA= - 40°C to 85°C, VDD=3.0V to 3.6V, VSS=0V)

Parameter

AC input high / low level voltage

Input timing measurement reference level voltage

Input rise / fall time

Output timing measurement reference level

Output load capacitance for access time measurement

Symbol

VIH / VIL

Vtrip

tR / tF

Voutref

CL

Value

Unit

2.4/0.4

V

1.4

V

1

ns

1.4

V

30

pF

Note :

1. Output load to measure access times is equivalent to two TTL gates and one capacitance(30pF).

For details, refer to AC/DC output load circuit.

2. VDD(min) is 3.15V when HY57V161610DTC-7I operates at CAS latency=2 and tCK2=8.9ns

Note

1

Rev. 0.3/Mar. 02

4

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