HMC286(V02) データシートの表示（PDF） - Hittite Microwave

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HMC286
(Rev.:V02)

GaAs MMIC LOW NOISE AMPLIFIER, 2.3 - 2.5 GHz

Hittite Microwave 

v02.0204

MICROWAVE CORPORATION

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

+7.0 Vdc

RF Input Power (RFin)(Vdd = +3.0 Vdc) 0 dBm

Channel Temperature

150 °C

Continuous Pdiss (T = 85 °C)

(derate 6.35 mW/°C above 85 °C)

0.413 W

Thermal Resistance

(channel to lead)

157 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

Outline Drawing

HMC286

GaAs MMIC LOW NOISE

AMPLIFIER, 2.3 - 2.5 GHz

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NOTES:

1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEADFRAME MATERIAL: COPPER ALLOY

3. LEADFRAME PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

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