HMC-ALH444 データシートの表示（PDF） - Hittite Microwave

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HMC-ALH444

GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz

Hittite Microwave 

v03.0410

HMC-ALH444

GaAs HEMT MMIC LOW NOISE

AMPLIFIER, 1 - 12 GHz

Pad Descriptions

Pad Number

Function

1

RFIN

Description

This pad is AC coupled

and matched to 50 Ohms.

1

Interface Schematic

2

RFOUT

This pad is AC coupled

and matched to 50 Ohms.

Power Supply Voltage for the amplifier. See assembly for

3

Vdd

required external components.

4, 5

Die bottom

Vgg1, Vgg2

Gate control for amplifier. Please follow “MMIC Amplifier Bias-

ing Procedure” application note. See assembly for required

external components.

GND

Die bottom must be connected to RF/DC ground.

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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