HMC-ALH435 データシートの表示（PDF） - Hittite Microwave

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HMC-ALH435

GaAs HEMT MMIC LOW NOISE AMPLIFIER, 5 - 20 GHz

Hittite Microwave 

v03.1009

HMC-ALH435

GaAs HEMT MMIC LOW NOISE

AMPLIFIER, 5 - 20 GHz

Pad Descriptions

Pad Number

Function

1

RFIN

Description

This pad is AC coupled

and matched to 50 Ohms.

1

Interface Schematic

Gate control for amplifier. Please follow “MMIC Amplifier Bias-

2

Vgg1

ing Procedure” application note. See assembly for required

external components.

Gate control for amplifier. Please follow “MMIC Amplifier Bias-

3

Vgg2

ing Procedure” application note. See assembly for required

external components.

4

RFOUT

This pad is AC coupled

and matched to 50 Ohms.

Power Supply Voltage for the amplifier. See assembly for

5

Vdd

required external components.

Die bottom

GND

Die bottom must be connected to RF/DC ground.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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