v01.1207
HMC-ABH241
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 50 - 66 GHz
Absolute Maximum Ratings
3
Drain Bias Voltage
Gain Bias Voltage
RF Input Power
Storage Temperature
Chennel Temperature
+5.5 Vdc
-1 to +0.3 Vdc
2 dBm
-65 °C to + 150°C
+180 °C
Outline Drawing
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information [1]
Standard
Alternate
WP - 19
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
3 - 138
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com