v02.0209
HMC-ALH102
GaAs HEMT MMIC WIDEBAND
LOW NOISE AMPLIFIER, 2 - 20 GHz
1
Pad Descriptions
Pad Number
Function
Pad Description
Interface Schematic
1
RFIN
This pas is AC coupled and matched to 50 Ohms.
Power Supply Voltage for the amplifier. See Assembly Dia-
2
Vdd
gram for required external components.
3, 5
4
Die Bottom
Vgg
RFOUT
GND
Gate control for amplifier. Please follow “MMIC Amplifier Bias-
ing Procedure” application note. See assembly for required
external components.
This pad is AC coupled and matched to 50 Ohms.
Die Bottom must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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