HFA16TA60CS データシートの表示（PDF） - Vishay Semiconductors
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HFA16TA60CS Datasheet PDF : 6 Pages
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HFA16TA60CS
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 2 x 8 A
ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Cathode to anode
breakdown voltage
VBR
IR = 100 µA
600
-
IF = 8.0 A
-
1.4
Maximum forward voltage
VFM
IF = 16 A
See fig. 1
-
1.7
IF = 8.0 A, TJ = 125 °C
-
1.4
Maximum reverse
leakage current
VR = VR rated
-
0.3
IRM
See fig. 2
TJ = 125 °C, VR = 0.8 x VR rated
-
100
Junction capacitance
CT
VR = 200 V
See fig. 3
-
10
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8.0
MAX.
-
1.7
2.1
1.7
5.0
500
25
-
UNITS
V
µA
pF
nH
DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
Reverse recovery time
See fig. 5, 6 and 16
trr
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V
trr1
TJ = 25 °C
trr2
TJ = 125 °C
-
18
-
-
37
55
-
55
90
Peak recovery current
See fig. 7 and 8
Reverse recovery charge
See fig. 9 and 10
IRRM1
IRRM2
Qrr1
Qrr2
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
IF = 8.0 A
dIF/dt = 200 A/µs
VR = 200 V
-
3.5
5.0
-
4.5
8.0
-
65
138
-
124
360
Peak rate of fall of recovery
current during tb
See fig. 11 & 12
dI(rec)M/dt1
dI(rec)M/dt2
TJ = 25 °C
TJ = 125 °C
-
240
-
-
210
-
UNITS
ns
A
nC
A/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Junction to case,
single leg conducting
Junction to case,
both legs conducting
Thermal resistance,
junction to ambient
Tlead
0.063" from case (1.6 mm) for 10 s
RthJC
RthJA
Typical socket mount
Weight
Mounting torque
Marking device
Case style D2PAK
MIN.
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
MAX.
300
3.5
UNITS
°C
-
1.75
K/W
-
80
2
-
0.07
-
12
-
(10)
HFA16TA60CS
g
oz.
kgf · cm
(lbf ⋅ in)
www.vishay.com
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 93073
Revision: 22-Oct-08
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