H7P0601DL データシートの表示（PDF） - Renesas Electronics

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H7P0601DL

Silicon P-Channel MOS FET High Speed Power Switching

Renesas Electronics 

H7P0601DL, H7P0601DS

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Avalanche current

Avalanche energy

Channel dissipation

VDSS

VGSS

ID

ID (pulse)Note1

IDR

IAP Note3

EAR Note3

Pch Note2

Channel temperature

Tch

Storage temperature

Tstg

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Rating

–60

±20

–20

–80

–20

–12

12.3

25

150

–55 to +150

Unit

V

V

A

A

A

A

mJ

W

°C

°C

Rev.1.00, Aug.05.2003, page 2 of 10

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