AT-31625 データシートの表示（PDF） - HP => Agilent Technologies

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AT-31625

4.8 V NPN Common Emitter Medium Power Output Transistor

HP => Agilent Technologies 

4.8 V NPN Common Emitter

Medium Power Output Transistor

Technical Data

AT-31625

Features

• 4.8 Volt Operation

• +28.0 dBm Pout @ 900 MHz,

Typ.

• 70% Collector Efficiency

@␣ 900 MHz, Typ.

• 9 dB Power Gain @ 900 MHz,

Typ.

• -31 dBc IMD3 @ Pout of

21␣ dBm per Tone, 900␣ MHz,

Typ.

• 50% Smaller than SOT-223

Package

MSOP-3 Surface Mount

Plastic Package

Outline 25

Pin Configuration

COLLECTOR

4

Applications

• Medium Power Driver

Device for Cellular/PCS,

ISM 900, WLAN

• Output Power Device for

ISM 900, Cordless, WLAN

EMITTER 1 2 3 EMITTER

BASE

Description

Hewlett Packard’s AT-31625 is a

low cost, NPN medium power

silicon bipolar junction transistor

housed in a miniature, MSOP-3

surface mount plastic package.

The AT-31625 can be used as a

driver device or an output device,

depending on the specific applica-

tion. The AT-31625 features

+28␣ dBm CW output power when

operated at 4.8 volts. Excellent

gain and superior efficiency make

the AT-31625 ideal for use in

battery powered systems.

The AT-31625 is fabricated with

Hewlett Packard’s 10 GHz Ft Self-

Aligned-Transistor (SAT) process.

The die are nitride passivated for

surface protection. Excellent

device uniformity, performance

and reliability are produced by the

use of ion-implantation, self-

alignment techniques, and gold

metalization in the fabrication of

these devices.

4-43

5965-5911E

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