GL159 データシートの表示（PDF） - GTM CORPORATION
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GL159 Datasheet PDF : 2 Pages
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CORPORATION ISSUED DATE :2005/07/19
REVISED DATE :2005/12/09C
GL159
PNP SILICON PLANAR HIGH CURRENT TRANSISTOR
Description
The GL159 is designed for general purpose switching and amplifier applications.
Features
Ԧ5 Amps continuous current, up to 15Amps peak current
ԦExcellent gain characteristic specified up to 10Amps
ԦVery low saturation voltages
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55~+150
ć
Collector to Base Voltage
VCBO
-100
V
Collector to Emitter Voltage
VCEO
-60
V
Emitter to Base Voltage
VEBO
-6
V
Collector Current (DC)
IC
-5
A
Collector Current (Pulse)
IC
-15
A
Total Power Dissipation
PD
3
W
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4
square inch minimum.
Electrical Characteristics(Ta = 25к,unless otherwise stated)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-100
-
-
V
IC=-100uA , IE=0
*BVCEO
-60
-
-
V
IC=-10mA, IB=0
BVEBO
-6
-
-
V
IE=-100uA ,IC=0
ICBO
-
-
-50
nA
VCB=-80V, IE=0
ICES
-
-
-50
nA
VCES=-60V
IEBO
-
-
-10
nA
VEB=-6V, IC=0
*VCE(sat)1
-
-20
-50
mV IC=-100mA, IB=-10mA
*VCE(sat)2
-
-85
-140
mV IC=-1A, IB=-100mA
*VCE(sat)3
-
-155
-210
mV IC=-2A, IB=-200mA
*VCE(sat)4
-
-370
-460
mV IC=-5A, IB=-500mA
*VBE(sat)
-
-1.08
-1.24
V
IC=-5A, IB=-500mA
*VBE(on)
-
-0.935
-1.07
V
VCE=-1V, IC=-5A
*hFE1
100
200
VCE=-1V, IC=-10mA
*hFE2
100
200
300
VCE=-1V, IC=-2A
*hFE3
75
90
VCE=-1V, IC=-5A
*hFE4
10
25
VCE=-1V, IC=-10A
fT
-
120
-
MHz VCE=-10V, IC=-100mA, f=50MHz
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