GA100NA60U データシートの表示（PDF） - International Rectifier
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GA100NA60U Datasheet PDF : 10 Pages
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GA100NA60U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
∆V(BR)CES/∆TJ
VCE(on)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
VFM
IGES
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Min. Typ. Max. Units
600 — — V
— 0.36 — V/°C
— 1.49 2.1
— 1.80 — V
— 1.47 —
3.0 — 6.0
— -7.6 — mV/°C
34 52 — S
— — 250 µA
— — 1.3 mA
— 1.3 1.6 V
— 1.16 1.3
— — ±100 nA
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 50A
IC = 100A
VGE = 15V
See Fig. 1, 4
IC = 50A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 50A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 50A
See Fig. 12
IC = 50A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
— 430 640
IC = 50A
— 48 72 nC VCC = 400V
See Fig. 7
— 130 190
––– 57 –––
VGE = 15V
TJ = 25°C
––– 80 –––
––– 240 —
ns IC = 60A, VCC = 480V
VGE = 15V, RG = 5.0Ω
––– 120 —
Energy losses include "tail" and
––– 0.41 –––
diode reverse recovery.
––– 2.51 ––– mJ
––– 2.92 4.4
––– 57 –––
––– 80 –––
––– 380 –––
––– 170 –––
TJ = 150°C,
ns IC = 60A, VCC = 480V
VGE = 15V, RG = 5.0Ω
Energy losses include "tail" and
––– 4.78 ––– mJ diode reverse recovery.
— 2.0 — nH
— 7400 —
— 730 —
VGE = 0V
pF VCC = 30V
See Fig. 6
— 90 —
ƒ = 1.0MHz
— 90 140 ns TJ = 25°C See Fig.
— 120 180
— 7.3 11
TJ = 125°C 13
A TJ = 25°C See Fig.
IF = 50A
— 11 16
TJ = 125°C 14
VR = 200V
— 360 550 nC TJ = 25°C See Fig.
— 780 1200
TJ = 125°C
15 di/dt = 200Aµs
— 370 — A/µs TJ = 25°C See Fig.
— 220 —
TJ = 125°C 16
Details of note through are on the page 7
2
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