GA100TS60SF データシートの表示（PDF） - International Rectifier

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GA100TS60SF

"HALF-BRIDGE" IGBT INT-A-PAK

International Rectifier 

GA100TS60SF

Bulletin I27201 rev. A 01/06

1000

Vge = 15V

100

Tj = 25˚C

Tj = 125˚C

10

0.6 0.8 1 1.2 1.4 1.6 1.8

VCE, Collector-to-Emitter Voltage (V)

Fig. 1 - Typical Output Characteristics

1000

T J = 125˚C

100

TJ = 25˚C

10

Vce = 10V

380µs PULSE WIDTH

1

5.5

6.5

7.5

8.5

VGE, Gate-to-Emitter Voltage (V)

Fig. 2 - Typical Transfer Characteristics

240

200

160

120

80

40

0

25 50 75 100 125 150

TC, Case Temperature (°C)

Fig. 3 - Maximum Collector Current

vs. Case Temperature

1.5

I C = 200A

1.3

1.1

I C= 100A

I = 50A

0.9

0.7

25

50 75 100 125 150

TJ, Junction Temperature (°C)

Fig. 4 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

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