GA200TD120U データシートの表示（PDF） - International Rectifier
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GA200TD120U Datasheet PDF : 10 Pages
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70000
60000
50000
40000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
30000
20000
10000
Coes
Cres
0
1
10
100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
GA200TD120U
20
VCC = 400V
I C = 24090AA
16
12
8
4
0
0
400
800
1200
1600
2000
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
140
VCC = 720V
VGE = 15V
130
TJ
IC
= 125 °C
= 200A
120
110
100
90
80
0
10
20
30
40
50
RG , Gate Resistance (O( hΩm))
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
1000 RG1=1=5OΩh;RmG2 = 0 Ω
VGE = 15V
VCC = 720V
100
IC = 400 A
IC = 200 A
IC = 100 A
10
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature °( C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
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