FS50UM-3 データシートの表示（PDF） - Renesas Electronics

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FS50UM-3

High-Speed Switching Use Nch Power MOS FET

Renesas Electronics 

FS50UM-3

High-Speed Switching Use

Nch Power MOS FET

Features

• Drive voltage : 10 V

• VDSS : 150 V

• rDS(ON) (max) : 31 mΩ

• ID : 50 A

• Integrated Fast Recovery Diode (TYP.) : 130 ns

Outline

RENESAS Package code: PRSS0004AA-A

(Package name: TO-220)

4

2, 4

1

REJ03G1424-0200

(Previous: MEJ02G0118-0101)

Rev.2.00

Aug 07, 2006

1. Gate

2. Drain

3. Source

4. Drain

12 3

3

Applications

Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

Maximum Ratings

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Drain current (Pulsed)

Avalanche drain current (Pulsed)

Source current

Source current (Pulsed)

Maximum power dissipation

Channel temperature

Storage temperature

Mass

Symbol

VDSS

VGSS

ID

IDM

IDA

IS

ISM

PD

Tch

Tstg

—

Ratings

150

±20

50

200

50

50

200

125

– 55 to +150

– 55 to +150

2.0

(Tc = 25°C)

Unit

Conditions

V

VGS = 0 V

V

VDS = 0 V

A

A

A

L = 100 µH

A

A

W

°C

°C

g

Typical value

Rev.2.00 Aug 07, 2006 page 1 of 6

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