FS70KM-2
Electrical Characteristics
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
V(BR)DSS
IGSS
IDSS
VGS(th)
rDS(ON)
VDS(ON)
| yfs |
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
Rth(ch-c)
trr
Min
100
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
3.0
14
0.49
53
6540
1150
500
95
175
330
190
1.0
—
120
Max
—
±0.1
0.1
4.0
20
0.7
—
—
—
—
—
—
—
—
1.5
3.57
—
Unit
V
µA
mA
V
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
(Tch = 25°C)
Test Conditions
ID = 1 mA, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = 100 V, VGS = 0 V
ID = 1 mA, VDS = 10 V
ID = 35 A, VGS = 10 V
ID = 35 A, VGS = 10 V
ID = 35 A, VDS = 10 V
VDS = 10 V, VGS = 0 V,
f = 1MHz
VDD = 50 V, ID = 35 A,
VGS = 10 V,
RGEN = RGS = 50 Ω
IS = 35 A, VGS = 0 V
Channel to case
IS = 70 A, dis/dt = – 100 A/µs
Rev.2.00 Aug 07, 2006 page 2 of 6