FS10AS-3 データシートの表示（PDF） - Renesas Electronics
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FS10AS-3 Datasheet PDF : 7 Pages
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FS10AS-3
Transfer Characteristics (Typical)
20
Tc = 25°C
VDS = 10V
16
Pulse Test
12
8
4
0
0
4
8
12 16 20
Gate-Source Voltage VGS (V)
Capacitance vs.
Drain-Source Voltage (Typical)
104
7
5
3
2
Ciss
103
7
5
3
2
102
7
5
3
2
Tch = 25°C
f = 1MHz
VGS = 0V
Coss
Crss
101
3
5 7 100 2 3
5 7 101
23
5 7 102 2 3
Drain-Source Voltage VDS (V)
Gate-Source Voltage vs.
Gate Charge (Typical)
20
Tch = 25°C
ID = 10A
16
VDS = 50V
80V
12
100V
8
4
0
0
10 20 30 40 50
Gate Charge Qg (nC)
Rev.2.00 Aug 07, 2006 page 4 of 6
Forward Transfer Admittance vs.
Drain Current (Typical)
103
7
5
4
3 Tc = 25°C
75°C
2
125°C
VDS = 10V
Pulse Test
102
7
5
4
3
2
101100 2 3 4 5 7 101 2 3 4 5 7 102
Drain Current ID (A)
Switching Characteristics (Typical)
103
7
5
4
Tch = 25°C
VDD = 80V
VGS = 10V
3
RGEN = RGS = 50Ω
2
102
7
5
4 tf
3
2
tr
td(off)
td(on)
101100 2 3 4 5 7 101
2 3 4 5 7 102
Drain Current ID (A)
Source-Drain Diode Forward
Characteristics (Typical)
20
VGS = 0V
Pulse Test
16
Tc = 125°C
12
75°C
25°C
8
4
0
0
0.4 0.8 1.2 1.6 2.0
Source-Drain Voltage VSD (V)
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