FEP16DT データシートの表示（PDF） - Vishay Semiconductors
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FEP16DT Datasheet PDF : 5 Pages
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FEP16xT, FEPF16xT, FEPB16xT
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
20
Resistive or Inductive Load
16
12
8
4
0
0
50
100
150
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
100
50 V to 400 V
TJ = 125 °C
500 V to 600 V
10
1
TJ = 25 °C
0.1
TJ = 100 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
300
250
TC = 100 °C
8.3 ms Single Half Sine-Wave
200
150
100
50
0
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
100
TJ = 125 °C
10
TJ = 25 °C
Pulse Width = 300 μs
1
1 % Duty Cycle
0.1
0.2
50 V to 200 V
300 V to 400 V
500 V to 600 V
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
1000
50 V to 400 V
500 V to 600 V
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
Revision: 05-Jun-2019
3
Document Number: 88596
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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