FEP16HT(2007) データシートの表示（PDF） - Vishay Semiconductors
部品番号
コンポーネント説明
一致するリスト
FEP16HT Datasheet PDF : 5 Pages
| |||
FEP(F,B)16AT thru FEP(F,B)16JT
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
20
Resistive or Inductive Load
16
12
8
4
0
0
50
100
150
Case Temperature (°C)
Figure 1. Forward Current Derating Curve
100
50 - 400 V
500 - 600 V
10
TJ = 125 °C
1
TJ = 25 °C
0.1
TJ = 100 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
300
TC = 100 °C
250
8.3 ms Single Half Sine-Wave
200
150
100
50
0
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
100
TJ = 125 °C
10
TJ = 25 °C
Pulse Width = 300 µs
1
1 % Duty Cycle
0.1
0.2
50 - 400 V
300 - 400 V
500 - 600 V
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
1000
50 - 400 V
500 - 600 V
100
TJ = 125 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
Document Number: 88596 For technical questions within your region, please contact one of the following:
Revision: 07-Nov-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Share Link: 