EN25S40 データシートの表示（PDF） - Eon Silicon Solution Inc.

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EN25S40

4 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector

Eon Silicon Solution Inc. 

EN25S40

EN25S40

4 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector

FEATURES

• Single power supply operation

- Full voltage range: 1.65-1.95 volt

• Serial Interface Architecture

- SPI Compatible: Mode 0 and Mode 3

• 4 M-bit Serial Flash

- 4 M-bit/512 K-byte/2048 pages

- 256 bytes per programmable page

• Standard or Dual SPI

- Standard SPI: CLK, CS#, DI, DO, WP#, HOLD#

- Dual SPI: CLK, CS#, DQ0, DQ1, WP#, HOLD#

• High performance

- 75MHz clock rate for one data bit

- 50MHz clock rate for two data bits

• Low power consumption

- 7 mA typical active current

- 1 μA typical power down current

• Uniform Sector Architecture:

- 128 sector of 4-Kbyte

- 8 blocks of 64-Kbyte

- Any sector or block can be erased individually

• Software and Hardware Write Protection:

- Block Protect Bits are default set to “1” at

Power-up

- Write Protect all or portion of memory via

software

- Enable/Disable protection with WP# pin

• High performance program/erase speed

- Page program time: 1.3ms typical

- Sector erase time: 90ms typical

- Block erase time 400ms typical

- Chip erase time: 3.5 seconds typical

• Lockable 256 byte OTP security sector

• Minimum 100K endurance cycle

• Package Options

- 8 pins SOP 150mil body width

- 8 contact VDFN 2x3mm

- 8 contact VDFN 5x6 mm

- All Pb-free packages are RoHS compliant

• Industrial temperature Range

GENERAL DESCRIPTION

The EN25S40 is a 4 Megabit (512K-byte) Serial Flash memory, with advanced write protection

mechanisms. The EN25S40 supports the standard Serial Peripheral Interface (SPI), and a high

performance Dual output as well as Dual I/O using SPI pins: Serial Clock, Chip Select, Serial DQ0(DI),

DQ1(DO), WP# and HOLD#. SPI clock frequencies of up to 50MHz are supported allowing equivalent

clock rates of 100MHz for Dual Output when using the Dual Output Fast Read instructions. The

memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction.

The EN25S40 is designed to allow either single Sector/Block at a time or full chip erase operation. The

EN25S40 can be configured to protect part of the memory as the software protected mode. The device

can sustain a minimum of 100K program/erase cycles on each sector or block.

This Data Sheet may be revised by subsequent versions

1

or modifications due to changes in technical specifications.

©2004 Eon Silicon Solution, Inc.,

Rev. A, Issue Date: 2009/04/28

www.eonssi.com

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