EN25Q40 データシートの表示（PDF） - Eon Silicon Solution Inc.

部品番号

コンポーネント説明

一致するリスト

EN25Q40

4 Megabit Serial Flash Memory with 4Kbyte Uniform Sector

Eon Silicon Solution Inc. 

EN25Q40

EN25Q40

4 Megabit Serial Flash Memory with 4Kbyte Uniform Sector

FEATURES

• Single power supply operation

- Full voltage range: 2.7-3.6 volt

• Serial Interface Architecture

- SPI Compatible: Mode 0 and Mode 3

• 4 M-bit Serial Flash

- 4 M-bit/512 K-byte/2048 pages

- 256 bytes per programmable page

• Standard, Dual or Quad SPI

- Standard SPI: CLK, CS#, DI, DO, WP#

- Dual SPI: CLK, CS#, DQ0, DQ1, WP#

- Quad SPI: CLK, CS#, DQ0, DQ1, DQ2, DQ3

• High performance

- 100MHz clock rate for one data bit

- 80MHz clock rate for two data bits

- 80MHz clock rate for four data bits

• Low power consumption

- 12 mA typical active current

- 1 μA typical power down current

• Uniform Sector Architecture:

- 128 sectors of 4-Kbyte

- 8 blocks of 64-Kbyte

- Any sector or block can be erased individually

• Software and Hardware Write Protection:

- Write Protect all or portion of memory via

software

- Enable/Disable protection with WP# pin

• High performance program/erase speed

- Page program time: 1.3ms typical

- Sector erase time: 90ms typical

- Block erase time 500ms typical

- Chip erase time: 3.5 seconds typical

• Lockable 256 byte OTP security sector

• Minimum 100K endurance cycle

• Package Options

- 8 pins SOP 150mil body width

- 8 contact USON 2x3 mm

- 8 contact VDFN 5x6 mm

- All Pb-free packages are RoHS compliant

• Industrial temperature Range

GENERAL DESCRIPTION

The EN25Q40 is a 4 Megabit (512K-byte) Serial Flash memory, with advanced write protection

mechanisms. The EN25Q40 supports the standard Serial Peripheral Interface (SPI), and a high

performance Dual output as well as Quad I/O using SPI pins: Serial Clock, Chip Select, Serial DQ0(DI),

DQ1(DO), DQ2(WP#) and DQ3(NC). SPI clock frequencies of up to 80MHz are supported allowing

equivalent clock rates of 160MHz for Dual Output and 320MHz for Quad Output when using the

Dual/Quad Output Fast Read instructions. The memory can be programmed 1 to 256 bytes at a time,

using the Page Program instruction.

The EN25Q40 is designed to allow either single Sector/Block at a time or full chip erase operation. The

EN25Q40 can be configured to protect part of the memory as the software protected mode. The device

can sustain a minimum of 100K program/erase cycles on each sector or block.

This Data Sheet may be revised by subsequent versions

1

or modifications due to changes in technical specifications.

©2004 Eon Silicon Solution, Inc.,

Rev. F, Issue Date: 2011/11/02

www.eonssi.com

Share Link: