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EN25F40 データシートの表示(PDF) - Eon Silicon Solution Inc.

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EN25F40
Eon
Eon Silicon Solution Inc. Eon
EN25F40 Datasheet PDF : 35 Pages
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EN25F40
EN25F40
4 Megabit Serial Flash Memory with 4Kbytes Uniform Sector
FEATURES
Single power supply operation
- Full voltage range: 2.3 ~ 3.6 volt
Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
4 Mbit Serial Flash
- 4 M-bit/512 K-byte/2048 pages
- 256 bytes per programmable page
High performance
- 100MHz clock rate for 2.7~ 3.6 volt
- 75MHz clock rate for 2.3 ~ 3.6 volt
Low power consumption
- 12 mA typical active current
- 1 µA typical power down current
Uniform Sector Architecture:
- 128 sectors of 4-Kbyte
- 8 blocks of 64-Kbyte
- Any sector or block can be
erased individually
Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
High performance program/erase speed
- Page program time: 1.3ms typical
- Sector erase time: 90ms typical
- Block erase time 500ms typical
- Chip erase time: 3.5 seconds typical
Lockable 256 byte OTP security sector
Minimum 100K endurance cycle
Package Options
- 8 pins SOP 150mil body width
- 8 pins SOP 200mil body width
- 8 contact VDFN
- 8 pins PDIP
- All Pb-free packages are RoHS compliant
Commercial and industrial temperature Range
GENERAL DESCRIPTION
The EN25F40 is a 4M-bit (512K-byte) Serial Flash memory, with advanced write protection mechanisms,
accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a
time, using the Page Program instruction.
The EN25F40 is designed to allow either single Sector/Block at a time or full chip erase operation. The
EN25F40 can be configured to protect part of the memory as the software protected mode. The device
can sustain a minimum of 100K program/erase cycles on each sector or block.
This Data Sheet may be revised by subsequent versions
2
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. I, Issue Date: 2010/05/31
www.eonssi.com

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