AS29LV400R-90SI データシートの表示（PDF） - Alliance Semiconductor

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AS29LV400R-90SI

3V 512Kx8/256K×16 CMOS Flash EEPROM

Alliance Semiconductor 

January 2001

Automated on-chip programming algorithm

START

Write program command sequence

(see below)

DATA polling or toggle bit

successfully completed

Increment

address

Last

NO

address?

YES

Programming completed

AS29LV400

®

Automated on-chip erase algorithm

START

Write erase command sequence

(see below)

DATA polling or toggle bit

successfully completed

Erase complete

Chip erase command sequence

×16 mode (address/data):

555h/AAh

Individual sector/multiple sector

erase command sequence

×16 mode (address/data):

555h/AAh

2AAh/55h

2AAh/55h

555h/80h

555h/80h

Program command sequence

×16 mode (address/data):

555h/AAh

2AAh/55h

555h/A0h

Program address/program data

555h/AAh

2AAh/55h

555h/10h

555h/AAh

2AAh/55h

Sector address/30h

Sector address/30h

Sector address/30h

optional sector erase commands

† The system software should check the status of DQ3 prior to and following each

subsequent sector erase command to ensure command completion. The device may

not have accepted the command if DQ3 is high on second status check.

Alliance Semiconductor

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